Semikron Danfoss SKM300GB125D Dual Half Bridge IGBT Module, 300 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

Bulk discount available

Subtotal (1 unit)*

R 11 242,04

(exc. VAT)

R 12 928,35

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 39 unit(s) ready to ship from another location
  • Plus 16 unit(s) shipping from 09 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1R 11,242.04
2 - 4R 10,960.99
5 - 9R 10,632.16
10 - 19R 10,206.87
20 +R 9,798.60

*price indicative

RS stock no.:
468-2498
Mfr. Part No.:
SKM300GB125D
Manufacturer:
Semikron Danfoss
Find similar products by selecting one or more attributes.
Select all

Brand

Semikron Danfoss

Maximum Continuous Collector Current

300 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS3

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.5mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links