STMicroelectronics STGF7NB60SL IGBT, 15 A 600 V, 3-Pin TO-220FP, Through Hole
- RS stock no.:
- 686-8360
- Mfr. Part No.:
- STGF7NB60SL
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
R 72,68
(exc. VAT)
R 83,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 254 unit(s) shipping from 13 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 36.34 | R 72.68 |
| 10 - 18 | R 35.43 | R 70.86 |
| 20 - 38 | R 34.365 | R 68.73 |
| 40 - 98 | R 32.99 | R 65.98 |
| 100 + | R 31.67 | R 63.34 |
*price indicative
- RS stock no.:
- 686-8360
- Mfr. Part No.:
- STGF7NB60SL
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 15 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 9.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 15 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 9.3mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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