STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 791-7655
- Mfr. Part No.:
- STGW60V60F
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 398,86
(exc. VAT)
R 458,69
(inc. VAT)
Add 20 units to get free delivery
Temporarily out of stock
- Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 79.772 | R 398.86 |
| 50 - 145 | R 77.778 | R 388.89 |
| 150 - 295 | R 75.444 | R 377.22 |
| 300 - 595 | R 72.426 | R 362.13 |
| 600 + | R 69.528 | R 347.64 |
*price indicative
- RS stock no.:
- 791-7655
- Mfr. Part No.:
- STGW60V60F
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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