STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 pack of 10 units)*

R 250,78

(exc. VAT)

R 288,40

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 25.078R 250.78
20 - 40R 24.451R 244.51
50 - 90R 23.717R 237.17
100 - 190R 22.768R 227.68
200 +R 21.857R 218.57

*price indicative

Packaging Options:
RS stock no.:
877-2873
Mfr. Part No.:
STGF10NB60SD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

23 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 20mm

Maximum Operating Temperature

+150 °C

Gate Capacitance

610pF

Energy Rating

8mJ

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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