STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS stock no.:
- 686-8341
- Mfr. Part No.:
- STGB10NB37LZT4
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
R 85,18
(exc. VAT)
R 97,96
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 142 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 42.59 | R 85.18 |
| 10 - 18 | R 41.525 | R 83.05 |
| 20 - 38 | R 40.28 | R 80.56 |
| 40 - 98 | R 38.67 | R 77.34 |
| 100 + | R 37.125 | R 74.25 |
*price indicative
- RS stock no.:
- 686-8341
- Mfr. Part No.:
- STGB10NB37LZT4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 375 V | |
| Maximum Gate Emitter Voltage | 12V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Minimum Operating Temperature | -65 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 375 V | ||
Maximum Gate Emitter Voltage 12V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Minimum Operating Temperature -65 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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