STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS stock no.:
- 168-7156
- Mfr. Part No.:
- STGB10NC60HDT4
- Manufacturer:
- STMicroelectronics
On back order for despatch 2024/11/27
Not Available for premium delivery
Added
Price (Excl VAT) Each (On a Reel of 1000)
R 17,759
(exc. VAT)
R 20,423
(inc. VAT)
| Units | Per unit | Per Reel* |
| 1000 + | R 17,759 | R 17 759,00 |
| *price indicative | ||
- RS stock no.:
- 168-7156
- Mfr. Part No.:
- STGB10NC60HDT4
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 65 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 9.35 x 4.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |