STMicroelectronics STGB10NC60KDT4, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS stock no.:
- 795-8975
- Mfr. Part No.:
- STGB10NC60KDT4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 108,59
(exc. VAT)
R 124,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 30 unit(s) shipping from 11 May 2026
- Plus 2,120 unit(s) shipping from 18 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 21.718 | R 108.59 |
| 10 - 95 | R 21.176 | R 105.88 |
| 100 - 495 | R 20.54 | R 102.70 |
| 500 - 995 | R 19.718 | R 98.59 |
| 1000 + | R 18.93 | R 94.65 |
*price indicative
- RS stock no.:
- 795-8975
- Mfr. Part No.:
- STGB10NC60KDT4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Series | STGx10NC60KD | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 10.4mm | ||
Series STGx10NC60KD | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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