Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V Module, Panel Mount

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Subtotal (1 unit)*

R 829,53

(exc. VAT)

R 953,96

(inc. VAT)

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1 - 4R 829.53
5 - 9R 808.79
10 - 99R 784.53
100 - 249R 753.15
250 +R 723.02

*price indicative

RS stock no.:
273-7361
Mfr. Part No.:
DDB6U75N16W1RBOMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

69 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

335 W

Package Type

Module

Mounting Type

Panel Mount

The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.

Thermal resistance
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current

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