Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V Module, Panel Mount

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Subtotal (1 unit)*

R 852,91

(exc. VAT)

R 980,85

(inc. VAT)

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Per unit
1 - 4R 852.91
5 - 9R 831.59
10 - 99R 806.64
100 - 249R 774.37
250 +R 743.40

*price indicative

RS stock no.:
273-7361
Mfr. Part No.:
DDB6U75N16W1RBOMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

69 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

335 W

Package Type

Module

Mounting Type

Panel Mount

The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.

Thermal resistance
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current

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