Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V, 8-Pin Module, Panel

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Subtotal (1 tray of 24 units)*

R 11 320,848

(exc. VAT)

R 13 018,968

(inc. VAT)

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Units
Per unit
Per Tray*
24 - 96R 471.702R 11,320.85
120 +R 459.91R 11,037.84

*price indicative

RS stock no.:
273-7360
Mfr. Part No.:
DDB6U75N16W1RBOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

69A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

335W

Package Type

Module

Mount Type

Panel

Pin Count

8

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Operating Temperature

150°C

Height

16.4mm

Length

62.8mm

Standards/Approvals

IEC61140, EN61140

Automotive Standard

No

The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.

Thermal resistance

Al2O3 internal isolation

Total power dissipation 335W

15 A continuous DC forward current

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