Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V Module, Panel Mount

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Subtotal (1 tray of 24 units)*

R 16 786,176

(exc. VAT)

R 19 304,112

(inc. VAT)

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  • Plus 24 unit(s) shipping from 19 January 2026
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Units
Per unit
Per Tray*
24 - 96R 699.424R 16,786.18
120 +R 681.939R 16,366.54

*price indicative

RS stock no.:
273-7360
Mfr. Part No.:
DDB6U75N16W1RBOMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

69 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

335 W

Package Type

Module

Mounting Type

Panel Mount

The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.

Thermal resistance
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current

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