Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V, 8-Pin Module, Panel
- RS stock no.:
- 273-7360
- Mfr. Part No.:
- DDB6U75N16W1RBOMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 tray of 24 units)*
R 10 919,928
(exc. VAT)
R 12 557,928
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 September 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 96 | R 454.997 | R 10,919.93 |
| 120 + | R 443.622 | R 10,646.93 |
*price indicative
- RS stock no.:
- 273-7360
- Mfr. Part No.:
- DDB6U75N16W1RBOMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 69A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 335W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Pin Count | 8 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61140, EN61140 | |
| Height | 16.4mm | |
| Length | 62.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 69A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 335W | ||
Package Type Module | ||
Mount Type Panel | ||
Pin Count 8 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61140, EN61140 | ||
Height 16.4mm | ||
Length 62.8mm | ||
Automotive Standard No | ||
The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.
Thermal resistance
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current
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