Infineon FP75R12N2T7BPSA2, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- RS stock no.:
- 273-2927
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tray of 15 units)*
R 16 812,12
(exc. VAT)
R 19 333,935
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 15 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | R 1,120.808 | R 16,812.12 |
| 30 + | R 1,092.788 | R 16,391.82 |
*price indicative
- RS stock no.:
- 273-2927
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Configuration | Common Emitter | |
| Package Type | EconoPIM2 | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Height | 20.5mm | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Configuration Common Emitter | ||
Package Type EconoPIM2 | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Height 20.5mm | ||
Length 107.5mm | ||
Width 45 mm | ||
Automotive Standard No | ||
The Infineon three phase PIM IGBT module with IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
High reliability and power density
Copper base plate for optimized heat spread
High power density
Solder contact technology
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