onsemi FGY4L160T120SWD, Type N-Channel Common Emitter IGBT, 160 A 1200 V, 4-Pin TO-247-4L, Through Hole

Image representative of range

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

R 260,68

(exc. VAT)

R 299,78

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 22 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9R 260.68
10 - 99R 254.16
100 +R 246.54

*price indicative

Packaging Options:
RS stock no.:
277-079
Mfr. Part No.:
FGY4L160T120SWD
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

160A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1.5kW

Number of Transistors

1

Configuration

Common Emitter

Package Type

TO-247-4L

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

15.8mm

Height

22.54mm

Automotive Standard

No

COO (Country of Origin):
CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.

High current capability

Smooth and optimized switching

Low switching loss

RoHS compliant

Related links