Infineon FF200R17KE4HOSA1, Type N-Channel Common Emitter IGBT, 200 A 1700 V, 7-Pin 62MMH, Panel

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Subtotal (1 tray of 10 units)*

R 18 059,75

(exc. VAT)

R 20 768,71

(inc. VAT)

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Units
Per unit
Per Tray*
10 - 10R 1,805.975R 18,059.75
20 +R 1,760.826R 17,608.26

*price indicative

RS stock no.:
273-2916
Mfr. Part No.:
FF200R17KE4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

200A

Maximum Collector Emitter Voltage Vceo

1700V

Maximum Power Dissipation Pd

1250W

Number of Transistors

1

Configuration

Common Emitter

Package Type

62MMH

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

61.4 mm

Standards/Approvals

IEC 61140

Length

106.4mm

Height

30.5mm

Automotive Standard

No

The Infineon dual IGBT module with fast IGBT4 and emitter controlled 4 diode.

Optimal electrical performance

Highest reliability

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