IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

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R 348,82

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R 401,14

(inc. VAT)

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1 - 9R 348.82
10 - 49R 340.10
50 - 99R 329.90
100 - 249R 316.70
250 +R 304.03

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RS stock no.:
192-988
Mfr. Part No.:
IXGH40N120B2D1
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.46mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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