Infineon IGBT Module 650 V, Through Hole
- RS stock no.:
- 248-1197
- Mfr. Part No.:
- DF300R07W2H3B77BPSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tray of 15 units)*
R 12 588,795
(exc. VAT)
R 14 477,115
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- Shipping from 08 June 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | R 839.253 | R 12,588.80 |
| 30 - 30 | R 818.271 | R 12,274.07 |
| 45 + | R 793.723 | R 11,905.85 |
*price indicative
- RS stock no.:
- 248-1197
- Mfr. Part No.:
- DF300R07W2H3B77BPSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 4 | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Series | DF300R07W2H3_B77 | |
| Standards/Approvals | RoHS | |
| Length | 56.7mm | |
| Height | 12mm | |
| Width | 42.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 4 | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Series DF300R07W2H3_B77 | ||
Standards/Approvals RoHS | ||
Length 56.7mm | ||
Height 12mm | ||
Width 42.5 mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
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