Infineon IKW50N65WR5XKSA1 IGBT, 50 A 650 V, 3-Pin PG-TO-247

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Subtotal (1 unit)*

R 62,84

(exc. VAT)

R 72,27

(inc. VAT)

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Units
Per unit
1 - 9R 62.84
10 - 39R 61.27
40 - 79R 59.43
80 - 119R 57.05
120 +R 54.77

*price indicative

Packaging Options:
RS stock no.:
244-2919
Mfr. Part No.:
IKW50N65WR5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

282W

Package Type

PG-TO-247

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.8V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

16.13 mm

Series

Reverse Conducting

Standards/Approvals

No

Length

41.42mm

Automotive Standard

No

The Infineon Monolithic diode optimized for PFC and welding applications. It has stable temperature behavior and very low VCEsat and low Eoff also Easy parallel switching capability based on positive temperature coefficient of VCEsat.

Low EMI

Low electrical parameters depending(dependence) on temperature

Qualified according to JESD-022 for target applications

Pb-free lead plating

Ro HS compliant

Complete product spectrum and Pspice Models

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