Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220
- RS stock no.:
- 242-0978
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 42,26
(exc. VAT)
R 48,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 264 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 21.13 | R 42.26 |
| 10 - 98 | R 20.60 | R 41.20 |
| 100 - 248 | R 19.98 | R 39.96 |
| 250 - 498 | R 19.18 | R 38.36 |
| 500 + | R 18.415 | R 36.83 |
*price indicative
- RS stock no.:
- 242-0978
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 125W | |
| Package Type | TO-220 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Height | 4.57mm | |
| Length | 29.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 125W | ||
Package Type TO-220 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Height 4.57mm | ||
Length 29.95mm | ||
Automotive Standard No | ||
The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
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