Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal (1 pack of 2 units)*

R 86,86

(exc. VAT)

R 99,88

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 43.43R 86.86
10 - 98R 42.345R 84.69
100 - 248R 41.075R 82.15
250 - 498R 39.43R 78.86
500 +R 37.855R 75.71

*price indicative

Packaging Options:
RS stock no.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

125 W

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

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