Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3
- RS stock no.:
- 242-0978
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 58,60
(exc. VAT)
R 67,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 280 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 29.30 | R 58.60 |
| 10 - 98 | R 28.57 | R 57.14 |
| 100 - 248 | R 27.715 | R 55.43 |
| 250 - 498 | R 26.605 | R 53.21 |
| 500 + | R 25.54 | R 51.08 |
*price indicative
- RS stock no.:
- 242-0978
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 42 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 125 W | |
| Number of Transistors | 1 | |
| Package Type | TO-220-3 | |
| Configuration | Single | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 42 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 125 W | ||
Number of Transistors 1 | ||
Package Type TO-220-3 | ||
Configuration Single | ||
The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
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