Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3
- RS stock no.:
- 242-0977
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 500 units)*
R 12 184,00
(exc. VAT)
R 14 011,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | R 24.368 | R 12,184.00 |
| 1000 - 1000 | R 23.759 | R 11,879.50 |
| 1500 + | R 23.046 | R 11,523.00 |
*price indicative
- RS stock no.:
- 242-0977
- Mfr. Part No.:
- IGP20N65H5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 42 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 125 W | |
| Package Type | TO-220-3 | |
| Configuration | Single | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 42 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 125 W | ||
Package Type TO-220-3 | ||
Configuration Single | ||
The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
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