Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130

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Subtotal (1 tray of 2 units)*

R 45 368,02

(exc. VAT)

R 52 173,22

(inc. VAT)

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Units
Per unit
Per Tray*
2 - 2R 22,684.01R 45,368.02
4 - 4R 22,116.91R 44,233.82
6 +R 21,453.405R 42,906.81

*price indicative

RS stock no.:
236-5198
Mfr. Part No.:
FZ825R33HE4DBPSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

825 A

Maximum Collector Emitter Voltage

3300 V

Maximum Power Dissipation

2400 kW

Number of Transistors

2

Package Type

AG-IHVB130

Configuration

Single

The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.

VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density

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