Infineon FZ2400R33HE4BPSA1 Single IGBT Module, 2.4 kA 3300 V AG-IHVB190
- RS stock no.:
- 236-5197
- Mfr. Part No.:
- FZ2400R33HE4BPSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
R 39 614,08
(exc. VAT)
R 45 556,19
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 17 August 2026
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Units | Per unit |
|---|---|
| 1 - 1 | R 39,614.08 |
| 2 - 2 | R 38,623.73 |
| 3 + | R 37,465.02 |
*price indicative
- RS stock no.:
- 236-5197
- Mfr. Part No.:
- FZ2400R33HE4BPSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 2.4 kA | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Maximum Power Dissipation | 5400 kW | |
| Number of Transistors | 3 | |
| Package Type | AG-IHVB190 | |
| Configuration | Single | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 2.4 kA | ||
Maximum Collector Emitter Voltage 3300 V | ||
Maximum Power Dissipation 5400 kW | ||
Number of Transistors 3 | ||
Package Type AG-IHVB190 | ||
Configuration Single | ||
The Infineon single-switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 2400 A
ICRM is 4800 A
It retains high current density
IC nom is 2400 A
ICRM is 4800 A
It retains high current density
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