Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

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Subtotal (1 pack of 5 units)*

R 324,30

(exc. VAT)

R 372,95

(inc. VAT)

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Units
Per unit
Per Pack*
5 +R 64.86R 324.30

*price indicative

Packaging Options:
RS stock no.:
226-6063
Mfr. Part No.:
IGB50N65S5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

270 W

Package Type

PG-TO263

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current

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