Infineon IKP40N65H5XKSA1, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS stock no.:
- 215-6663
- Mfr. Part No.:
- IKP40N65H5XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 209,94
(exc. VAT)
R 241,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 420 unit(s) shipping from 03 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 41.988 | R 209.94 |
| 10 - 95 | R 40.938 | R 204.69 |
| 100 - 245 | R 39.71 | R 198.55 |
| 250 - 495 | R 38.122 | R 190.61 |
| 500 + | R 36.598 | R 182.99 |
*price indicative
- RS stock no.:
- 215-6663
- Mfr. Part No.:
- IKP40N65H5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT in TRENCHSTOP TM 5 Technology | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT in TRENCHSTOP TM 5 Technology | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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- Infineon 74 A 650 V Through Hole