Infineon IKP40N65H5XKSA1, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole

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Subtotal (1 pack of 5 units)*

R 206,03

(exc. VAT)

R 236,935

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 41.206R 206.03
10 - 95R 40.176R 200.88
100 - 245R 38.97R 194.85
250 - 495R 37.412R 187.06
500 +R 35.916R 179.58

*price indicative

Packaging Options:
RS stock no.:
215-6663
Mfr. Part No.:
IKP40N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT in TRENCHSTOP TM 5 Technology

Maximum Continuous Collector Current Ic

74A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-free lead plating, RoHS

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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