Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3

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Subtotal (1 pack of 2 units)*

R 94,45

(exc. VAT)

R 108,618

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 47.225R 94.45
10 - 18R 46.045R 92.09
20 - 24R 44.665R 89.33
26 - 48R 42.88R 85.76
50 +R 41.165R 82.33

*price indicative

RS stock no.:
273-3022
Mfr. Part No.:
IPP65R190CFD7AAKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Series

IPP65R190CFD7A

Package Type

PG-TO220-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

77W

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

AECQ101, RoHS

Automotive Standard

AEC-Q101

The Infineon 650V cool MOS N channel automotive SJ power MOSFET. It has highest reliability in the field meeting automotive lifetime requirements.

Enabling of higher power density designs

Granular portfolio available

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