Infineon IKFW60N60DH3EXKSA1 IGBT, 53 A 600 V, 3-Pin PG-TO247-3-AI
- RS stock no.:
- 215-6660
- Mfr. Part No.:
- IKFW60N60DH3EXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 006,01
(exc. VAT)
R 2 306,91
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 30 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | R 66.867 | R 2,006.01 |
| 90 - 120 | R 65.196 | R 1,955.88 |
| 150 + | R 63.24 | R 1,897.20 |
*price indicative
- RS stock no.:
- 215-6660
- Mfr. Part No.:
- IKFW60N60DH3EXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 53 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 141 W | |
| Package Type | PG-TO247-3-AI | |
| Pin Count | 3 | |
| Transistor Configuration | Isolated | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 53 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 141 W | ||
Package Type PG-TO247-3-AI | ||
Pin Count 3 | ||
Transistor Configuration Isolated | ||
The Infineon insulated-gate bipolar transistor copacked with rapid 1 fast and soft antiparallel diode in fully isolated package.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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