onsemi FGH75T65SHDTL4 IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
- RS stock no.:
- 181-1889
- Mfr. Part No.:
- FGH75T65SHDTL4
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 unit)*
R 47,74
(exc. VAT)
R 54,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 424 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 9 | R 47.74 |
| 10 - 49 | R 46.55 |
| 50 - 99 | R 45.15 |
| 100 - 249 | R 43.34 |
| 250 + | R 41.61 |
*price indicative
- RS stock no.:
- 181-1889
- Mfr. Part No.:
- FGH75T65SHDTL4
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 455 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5.2 x 22.74mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 160mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 3710pF | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 455 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5.2 x 22.74mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 160mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3710pF | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
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