onsemi, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS stock no.:
- 178-4259
- Mfr. Part No.:
- FGH60T65SQD-F155
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 1 555,80
(exc. VAT)
R 1 789,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 390 unit(s) shipping from 16 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | R 51.86 | R 1,555.80 |
| 150 + | R 50.564 | R 1,516.92 |
*price indicative
- RS stock no.:
- 178-4259
- Mfr. Part No.:
- FGH60T65SQD-F155
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 G03 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | Field Stop 4th Generation | |
| Automotive Standard | No | |
| Energy Rating | 50mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 G03 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series Field Stop 4th Generation | ||
Automotive Standard No | ||
Energy Rating 50mJ | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
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