onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS stock no.:
- 178-4259
- Mfr. Part No.:
- FGH60T65SQD-F155
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
R 1 622,91
(exc. VAT)
R 1 866,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 420 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | R 54.097 | R 1,622.91 |
| 150 + | R 52.745 | R 1,582.35 |
*price indicative
- RS stock no.:
- 178-4259
- Mfr. Part No.:
- FGH60T65SQD-F155
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 333 W | |
| Package Type | TO-247 G03 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Energy Rating | 50mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 3813pF | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 333 W | ||
Package Type TO-247 G03 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Energy Rating 50mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3813pF | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
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