Vishay, Type N-Channel IGBT, 3-Pin TO-247AC
- RS stock no.:
- 180-7344
- Mfr. Part No.:
- SIHG47N60EF-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
R 3 145,90
(exc. VAT)
R 3 617,775
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 25 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | R 125.836 | R 3,145.90 |
| 100 - 225 | R 122.69 | R 3,067.25 |
| 250 - 475 | R 119.009 | R 2,975.23 |
| 500 - 975 | R 114.248 | R 2,856.20 |
| 1000 + | R 109.678 | R 2,741.95 |
*price indicative
- RS stock no.:
- 180-7344
- Mfr. Part No.:
- SIHG47N60EF-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 379W | |
| Package Type | TO-247AC | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Series | EF | |
| Length | 16.25mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 1500mJ | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 379W | ||
Package Type TO-247AC | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 150°C | ||
Series EF | ||
Length 16.25mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 1500mJ | ||
- COO (Country of Origin):
- CN
The Vishay SIHG47N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-247AC package. It is offers drain to source resistance (RDS.) of 0.065ohms at 10VGS. Maximum drain current 47A.
Fast body diode MOSFET using E series technology
Reduced trr, Qrr, and IRRM
Low figure of merit (FOM) Ron x Qg
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