IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

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Subtotal (1 unit)*

R 457,12

(exc. VAT)

R 525,69

(inc. VAT)

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1 - 4R 457.12
5 - 9R 445.69
10 +R 432.32

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RS stock no.:
146-4404
Mfr. Part No.:
IXYH30N170C
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20 V, ±30V

Maximum Power Dissipation

937 W

Number of Transistors

1

Package Type

TO247AD

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.34mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.

Thin wafer XPT technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches

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