IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole
- RS stock no.:
- 146-4252
- Mfr. Part No.:
- IXYH30N170C
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 tube of 30 units)*
R 9 930,45
(exc. VAT)
R 11 420,01
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 29 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 331.015 | R 9,930.45 |
| 120 - 270 | R 322.74 | R 9,682.20 |
| 300 - 570 | R 313.057 | R 9,391.71 |
| 600 - 870 | R 300.535 | R 9,016.05 |
| 900 + | R 288.514 | R 8,655.42 |
*price indicative
- RS stock no.:
- 146-4252
- Mfr. Part No.:
- IXYH30N170C
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30V | |
| Maximum Power Dissipation | 937 W | |
| Number of Transistors | 1 | |
| Package Type | TO247AD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.34mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30V | ||
Maximum Power Dissipation 937 W | ||
Number of Transistors 1 | ||
Package Type TO247AD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.34mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.
Thin wafer XPT technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
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