onsemi NGTG35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 145-3244
- Mfr. Part No.:
- NGTG35N65FL2WG
- Manufacturer:
- ON Semiconductor
Image representative of range
Subtotal (1 tube of 30 units)*
R 1 512,75
(exc. VAT)
R 1 739,67
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | R 50.425 | R 1,512.75 |
*price indicative
- RS stock no.:
- 145-3244
- Mfr. Part No.:
- NGTG35N65FL2WG
- Manufacturer:
- ON Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Maximum Continuous Collector Current | 70 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 300 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.08mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 3115pF | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Maximum Continuous Collector Current 70 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 300 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3115pF | ||
- COO (Country of Origin):
- CN
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