onsemi FGB40T65SPD-F085, P-Channel IGBT, 80 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount

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Unavailable
RS will no longer stock this product.
RS stock no.:
135-8663
Mfr. Part No.:
FGB40T65SPD-F085
Manufacturer:
ON Semiconductor
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Brand

ON Semiconductor

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

267 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

P

Pin Count

2+Tab

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.83mm

Gate Capacitance

1520pF

Automotive Standard

AEC-Q101

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Automotive IGBT, Fairchild Semiconductor


A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Features


• Positive temperaure co-efficient for easy parallel operation
• High current capability
• Low saturation voltage
• High input impedance
• Tightened parameter distribution

RS Product Codes


864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)

Note

Quoted current ratings apply when junction temperature Tc = +100°C.

Standards

AEC-Q101


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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