Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A, Through Hole

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Subtotal 4 units (supplied in a tube)*

R 206,60

(exc. VAT)

R 237,60

(inc. VAT)

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Units
Per unit
4 - 8R 51.65
10 - 48R 46.955
50 - 98R 43.02
100 +R 39.705

*price indicative

Packaging Options:
RS stock no.:
124-3701P
Mfr. Part No.:
RJH60F3DPQ-A0#T0
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

178.5 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Maximum Operating Temperature

+150 °C

Gate Capacitance

1260pF

COO (Country of Origin):
JP

IGBT Discretes, Renesas Electronics



IGBT Discretes & Modules


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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