Renesas Electronics RJH65T14DPQ-A0#T0 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole

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Subtotal 20 units (supplied in a tube)*

R 1 420,20

(exc. VAT)

R 1 633,20

(inc. VAT)

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Units
Per unit
20 - 38R 71.01
40 - 198R 68.88
200 - 398R 66.125
400 +R 63.48

*price indicative

Packaging Options:
RS stock no.:
124-0908P
Mfr. Part No.:
RJH65T14DPQ-A0#T0
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

250 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

1750pF

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, Renesas Electronics



IGBT Discretes & Modules


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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