IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

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R 399,11

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R 458,98

(inc. VAT)

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1 - 9R 399.11
10 - 49R 389.13
50 - 99R 377.46
100 - 249R 362.36
250 +R 347.87

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RS stock no.:
194-899
Mfr. Part No.:
IXGH32N170
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.46mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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