Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100 V, SOIC

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Subtotal (1 pack of 2 units)*

R 175,37

(exc. VAT)

R 201,676

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 87.685R 175.37
10 - 48R 85.495R 170.99
50 - 98R 82.93R 165.86
100 - 248R 79.615R 159.23
250 +R 76.43R 152.86

*price indicative

Packaging Options:
RS stock no.:
264-0589
Mfr. Part No.:
HIP2101EIBZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

Gate Driver Module

Output Current

3A

Pin Count

8

Package Type

SOIC

Fall Time

10ns

Driver Type

MOSFET

Rise Time

10ns

Minimum Supply Voltage

100V

Maximum Supply Voltage

100V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

3.98 mm

Height

1.7mm

Series

HIP2101

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Renesas Electronics gate drivers is a high frequency half-bridge NMOS FET driver with a tri-level PWM input with an operating supply and integrated high-side bootstrap bias, it supports driving the high-side and low-side NMOS in halfbridge applications.

Programmable dead-time prevents shoot-through

Bi-directional converter

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