Renesas Electronics HIP2101IBZ MOSFET Gate Driver 2, 2 A 8-Pin 14 V, SOIC

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Subtotal (1 tube of 98 units)*

R 7 034,244

(exc. VAT)

R 8 089,41

(inc. VAT)

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Last RS stock
  • Final 686 unit(s), ready to ship from another location

Units
Per unit
Per Tube*
98 - 98R 71.778R 7,034.24
196 - 196R 69.984R 6,858.43
294 - 490R 67.884R 6,652.63
588 - 980R 65.169R 6,386.56
1078 +R 62.562R 6,131.08

*price indicative

RS stock no.:
196-8875
Mfr. Part No.:
HIP2101IBZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

MOSFET

Output Current

2A

Pin Count

8

Fall Time

500ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

500ns

Minimum Supply Voltage

18V

Maximum Supply Voltage

14V

Number of Drivers

2

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

HIP2101

Length

5mm

Standards/Approvals

No

Height

1.75mm

Mount Type

Surface

Automotive Standard

No

The Renesas Electronics' HIP2101 series device are a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the

HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. Under voltage protection on both the

low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs.

Drives N-Channel MOSFET Half Bridge

SOIC, EPSOIC, QFN and DFN Package Options

Bootstrap Supply Max Voltage to 114VDC

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