Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 162,71

(exc. VAT)

R 187,115

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 170 unit(s) shipping from 12 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 20R 32.542R 162.71
25 - 45R 31.728R 158.64
50 - 95R 30.776R 153.88
100 - 245R 29.544R 147.72
250 +R 28.362R 141.81

*price indicative

Packaging Options:
RS stock no.:
264-3550
Mfr. Part No.:
HIP2210FRTZ
Manufacturer:
Renesas Electronics
Find similar products by selecting one or more attributes.
Select all

Brand

Renesas Electronics

Product Type

Gate Driver Module

Output Current

1.69mA

Pin Count

10

Package Type

SOIC

Fall Time

790ns

Driver Type

MOSFET

Rise Time

20ns

Minimum Supply Voltage

100V

Maximum Supply Voltage

100V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.75mm

Series

HIP2210

Length

5mm

Width

4 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to

18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.

Integrated 0.5Ω typical bootstrap diode

Robust noise tolerance

VDD and boot undervoltage lockout

Related links