Infineon 1EDS5663HXUMA1 MOSFET Gate Driver 1, 8 A 16-Pin 3.5 V, DSO

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Subtotal (1 pack of 5 units)*

R 152,42

(exc. VAT)

R 175,285

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 30.484R 152.42
10 - 95R 29.722R 148.61
100 - 245R 28.83R 144.15
250 - 495R 27.676R 138.38
500 +R 26.568R 132.84

*price indicative

Packaging Options:
RS stock no.:
222-4771
Mfr. Part No.:
1EDS5663HXUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Output Current

8A

Pin Count

16

Package Type

DSO

Fall Time

4.5ns

Driver Type

MOSFET

Number of Outputs

2

Rise Time

6.5ns

Minimum Supply Voltage

4V

Number of Drivers

1

Maximum Supply Voltage

3.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

2.35mm

Length

10.3mm

Series

1EDS5663H

Width

7.5 mm

Standards/Approvals

No

Mount Type

Surface

Automotive Standard

No

The Infineon new single-channel galvanic ally isolated gate driver IC component 1EDS5663H is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Low ohmic outputs

Single-channel galvanic isolation

Integrated galvanic isolation

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