Infineon MOSFET Gate Driver 1, 8 A 13-Pin 3.5 V, TFLGA
- RS stock no.:
- 222-4760
- Mfr. Part No.:
- 1EDF5673KXUMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 4000 units)*
R 106 176,00
(exc. VAT)
R 122 104,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 April 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | R 26.544 | R 106,176.00 |
| 8000 - 8000 | R 25.881 | R 103,524.00 |
| 12000 + | R 25.104 | R 100,416.00 |
*price indicative
- RS stock no.:
- 222-4760
- Mfr. Part No.:
- 1EDF5673KXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 13 | |
| Fall Time | 19ns | |
| Package Type | TFLGA | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4.2V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 3.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 2.35mm | |
| Length | 10.3mm | |
| Series | 1EDF5673F | |
| Width | 7.5 mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 13 | ||
Fall Time 19ns | ||
Package Type TFLGA | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4.2V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 3.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 2.35mm | ||
Length 10.3mm | ||
Series 1EDF5673F | ||
Width 7.5 mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon single-channel galvanic ally isolated gate driver IC 1EDF5673K is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Low ohmic outputs
Single-channel galvanic isolation
Integrated galvanic isolation
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