MPN

Infineon 4 kB FRAM 8-Pin SOIC, FM24C04B-GTR

RS stock no.:: 215-5779
Mfr. Part No.:: FM24C04B-GTR
Manufacturer:: Infineon

Infineon 4 kB FRAM 8-Pin SOIC, FM24C04B-GTR

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 128,78

(exc. VAT)

R 148,095

(inc. VAT)

Add 60 units to get free delivery

Orders below R 1 500,00 (exc. VAT) cost R 120,00.

In Stock

4,065 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	R 25.756	R 128.78
50 - 95	R 25.112	R 125.56
100 - 245	R 24.358	R 121.79
250 - 995	R 23.384	R 116.92
1000 +	R 22.448	R 112.24

*price indicative

RS stock no.:: 215-5779
Mfr. Part No.:: FM24C04B-GTR
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	FRAM
	Memory Size	4kB
	Organisation	512 x 8 bit
	Data Bus Width	8bit
	Maximum Random Access Time	10ns
	Maximum Clock Frequency	1MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Length	4.97mm
	Height	1.48mm
	Width	3.98 mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Maximum Supply Voltage	5.5V
	Minimum Supply Voltage	4.5V
	Automotive Standard	AEC-Q100
	Number of Words	512

	Select all
	Brand Infineon
	Product Type FRAM
	Memory Size 4kB
	Organisation 512 x 8 bit
	Data Bus Width 8bit
	Maximum Random Access Time 10ns
	Maximum Clock Frequency 1MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Length 4.97mm
	Height 1.48mm
	Width 3.98 mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Maximum Supply Voltage 5.5V
	Minimum Supply Voltage 4.5V
	Automotive Standard AEC-Q100
	Number of Words 512

Datasheet - FM24C04B-GTR

The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.

4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8

High-endurance 100 trillion (1014) read/writes

151-year data retention

NoDelay™ writes

Advanced high-reliability ferroelectric process

Infineon 4 kB FRAM 8-Pin SOIC, FM24C04B-GTR

Add 60 units to get free delivery

Related links