Infineon 256 kB SPI FRAM 8-Pin DFN, FM25V02A-DG
- RS stock no.:
- 124-2986
- Mfr. Part No.:
- FM25V02A-DG
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 219,99
(exc. VAT)
R 252,988
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 109.995 | R 219.99 |
| 10 - 18 | R 107.245 | R 214.49 |
| 20 - 98 | R 104.03 | R 208.06 |
| 100 - 498 | R 99.87 | R 199.74 |
| 500 + | R 95.875 | R 191.75 |
*price indicative
- RS stock no.:
- 124-2986
- Mfr. Part No.:
- FM25V02A-DG
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32K x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Width | 4 mm | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2V | |
| Number of Words | 32k | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32K x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type DFN | ||
Pin Count 8 | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Width 4 mm | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2V | ||
Number of Words 32k | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 256 kB SPI FRAM 8-Pin DFN
- Infineon 256 kB SPI FRAM 8-Pin SOIC
- Infineon 256 kB SPI FRAM 8-Pin SOIC, FM25W256-G
- Infineon 64 kB SPI FRAM 8-Pin DFN, FM25CL64B-DG
- Infineon 64 kB SPI FRAM 8-Pin DFN
- Infineon 256 kB Serial-SPI FRAM 8-Pin SOIC
- Infineon 256 kB Serial-SPI FRAM 8-Pin SOIC, FM25V02A-GTR
- Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG