Infineon 512 kB FRAM 8-Pin SOIC
- RS stock no.:
- 188-5404
- Mfr. Part No.:
- FM24V05-G
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 97 units)*
R 18 639,132
(exc. VAT)
R 21 434,963
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | R 192.156 | R 18,639.13 |
| 194 - 194 | R 187.352 | R 18,173.14 |
| 291 - 485 | R 181.732 | R 17,628.00 |
| 582 + | R 174.462 | R 16,922.81 |
*price indicative
- RS stock no.:
- 188-5404
- Mfr. Part No.:
- FM24V05-G
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 512kB | |
| Product Type | FRAM | |
| Organisation | 64k x 8 Bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 450ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 3.4MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Length | 4.97mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Number of Words | 64K | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2V | |
| Maximum Supply Voltage | 3.6V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 512kB | ||
Product Type FRAM | ||
Organisation 64k x 8 Bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 450ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 3.4MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Length 4.97mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Number of Words 64K | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2V | ||
Maximum Supply Voltage 3.6V | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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