Infineon 512 kB FRAM 8-Pin SOIC
- RS stock no.:
- 188-5404
- Mfr. Part No.:
- FM24V05-G
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 97 units)*
R 18 923,439
(exc. VAT)
R 21 761,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 388 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | R 195.087 | R 18,923.44 |
| 194 - 194 | R 190.21 | R 18,450.37 |
| 291 - 485 | R 184.504 | R 17,896.89 |
| 582 + | R 177.124 | R 17,181.03 |
*price indicative
- RS stock no.:
- 188-5404
- Mfr. Part No.:
- FM24V05-G
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 512kB | |
| Organisation | 64k x 8 Bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 450ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 3.4MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 3.98 mm | |
| Height | 1.38mm | |
| Length | 4.97mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Number of Words | 64K | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 512kB | ||
Organisation 64k x 8 Bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 450ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 3.4MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 3.98 mm | ||
Height 1.38mm | ||
Length 4.97mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Number of Words 64K | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2V | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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