Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC
- RS stock no.:
- 125-4217P
- Mfr. Part No.:
- FM24W256-G
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal 10 units (supplied in a tube)*
R 1 107,10
(exc. VAT)
R 1 273,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 938 unit(s) shipping from 25 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 49 | R 110.71 |
| 50 - 99 | R 107.39 |
| 100 - 499 | R 103.09 |
| 500 + | R 98.97 |
*price indicative
- RS stock no.:
- 125-4217P
- Mfr. Part No.:
- FM24W256-G
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 256kB | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Maximum Clock Frequency | 1MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Height | 1.38mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 32k | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 256kB | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Maximum Clock Frequency 1MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Height 1.38mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 32k | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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