Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM1808B-SG

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Subtotal (1 unit)*

R 235,36

(exc. VAT)

R 270,66

(inc. VAT)

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Units
Per unit
1 - 9R 235.36
10 - 24R 229.48
25 - 99R 222.60
100 - 249R 213.70
250 +R 205.15

*price indicative

Packaging Options:
RS stock no.:
124-2981
Mfr. Part No.:
FM1808B-SG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

SOIC

Pin Count

28

Standards/Approvals

No

Width

7.62 mm

Length

18.11mm

Height

2.37mm

Maximum Operating Temperature

85°C

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

4.5V

Maximum Supply Voltage

5.5V

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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