Infineon 4 MB SPI FRAM 8-Pin SOIC, CY15B104Q-SXI

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Subtotal (1 unit)*

R 426,68

(exc. VAT)

R 490,68

(inc. VAT)

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  • 670 unit(s) shipping from 02 June 2026
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Units
Per unit
1 - 4R 426.68
5 - 9R 416.01
10 - 49R 403.53
50 - 187R 387.39
188 +R 371.89

*price indicative

Packaging Options:
RS stock no.:
124-2933
Mfr. Part No.:
CY15B104Q-SXI
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

4MB

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

SOIC

Pin Count

8

Length

5.3mm

Height

1.78mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

Number of Words

512K

Number of Bits per Word

8

Automotive Standard

No

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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