Infineon BFP842ESDH6327XTSA1 Bipolar Transistor, 40 mA NPN, 3.7 V, 4-Pin SOT-343
- RS stock no.:
- 273-2850
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Manufacturer:
- Infineon
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R 54,60
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R 62,80
(inc. VAT)
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In Stock
- 20 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 29 April 2027
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | R 5.46 | R 54.60 | - |
| 50 - 90 | R 5.324 | R 53.24 | 2% |
| 100 - 240 | R 5.164 | R 51.64 | 5% |
| 250 - 990 | R 4.957 | R 49.57 | 9% |
| 1000 + | R 4.759 | R 47.59 | 12% |
*price indicative
- RS stock no.:
- 273-2850
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.7V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 57GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.7V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Power Dissipation Pd 120mW | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 57GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
The Infineon high performance RF heterojunction bipolar transistor with an integrated ESD protection suitable for 2.3 to 3.5 GHz LNA applications.
Suitable for low voltage applications
It has application in wireless communications like WLAN, WiMAX and Bluetooth
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