Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343
- RS stock no.:
- 170-2366
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Manufacturer:
- Infineon
Subtotal (1 pack of 20 units)*
R 104,12
(exc. VAT)
R 119,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 20 unit(s) shipping from 10 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | R 5.206 | R 104.12 |
*price indicative
- RS stock no.:
- 170-2366
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface Mount | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 4.1V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 57GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 1.3mm | |
| Width | 1.25 mm | |
| Length | 2.1mm | |
| Series | BFP842ESD | |
| Standards/Approvals | JEDEC47/20/22 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.25V | ||
Package Type SOT-343 | ||
Mount Type Surface Mount | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Power Dissipation Pd 120mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 4.1V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 57GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 1.3mm | ||
Width 1.25 mm | ||
Length 2.1mm | ||
Series BFP842ESD | ||
Standards/Approvals JEDEC47/20/22 | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
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