Infineon BFP650H6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin TSFP-4-1
- RS stock no.:
- 259-1446
- Distrelec Article No.:
- 304-40-489
- Mfr. Part No.:
- BFP650H6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 136,925
(exc. VAT)
R 157,475
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,825 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 5.477 | R 136.93 |
| 50 - 75 | R 5.34 | R 133.50 |
| 100 - 225 | R 5.18 | R 129.50 |
| 250 - 975 | R 4.973 | R 124.33 |
| 1000 + | R 4.774 | R 119.35 |
*price indicative
- RS stock no.:
- 259-1446
- Distrelec Article No.:
- 304-40-489
- Mfr. Part No.:
- BFP650H6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Power Dissipation Pd | 500mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Power Dissipation Pd 500mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon high linearity low noise SiGe:C NPN RF transistor, It is easy to use Pb-free (RoHS compliant) standard package with visible leads.
Driver amplifier
ISM bands 434 and 868 MHz
1.9 GHz Cordless phones
CATV LNA
Transmitter driver amplifier
Output stage LNA for Active antennas
Related links
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