Infineon BFP720FH6327XTSA1 RF Bipolar Transistor, 25 mA NPN, 13 V, 4-Pin TSFP-4-1
- RS stock no.:
- 261-3949
- Mfr. Part No.:
- BFP720FH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 133,60
(exc. VAT)
R 153,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 6.68 | R 133.60 |
| 40 - 80 | R 6.513 | R 130.26 |
| 100 - 220 | R 6.318 | R 126.36 |
| 240 - 480 | R 6.065 | R 121.30 |
| 500 + | R 5.823 | R 116.46 |
*price indicative
- RS stock no.:
- 261-3949
- Mfr. Part No.:
- BFP720FH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Transition Frequency ft | 45GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.55mm | |
| Length | 1.4mm | |
| Standards/Approvals | RoHS | |
| Width | 1.2mm | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Transition Frequency ft 45GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.55mm | ||
Length 1.4mm | ||
Standards/Approvals RoHS | ||
Width 1.2mm | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon wideband NPN RF heterojunction bipolar transistor with high transition frequency that enables low noise figure at high frequencies. That are Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
That having high gain Value
2 mA base current
Related links
- Infineon RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon BFP650H6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon BFP405FH6327XTSA1 RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon BFP720H6327XTSA1 Transistor 13 V, 4-Pin SOT-343
- Infineon Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 10 V, 4-Pin TSFP-4-1