Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 pack of 10 units)*

R 52,75

(exc. VAT)

R 60,66

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 5.275R 52.75
50 - 90R 5.143R 51.43
100 - 240R 4.989R 49.89
250 - 990R 4.789R 47.89
1000 +R 4.597R 45.97

*price indicative

Packaging Options:
RS stock no.:
259-1439
Mfr. Part No.:
BFP640ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

50mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Maximum Collector Base Voltage VCBO

13V

Transistor Polarity

NPN

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

200mW

Minimum DC Current Gain hFE

110

Maximum Emitter Base Voltage VEBO

1.2V

Maximum Transition Frequency ft

70GHz

Maximum Operating Temperature

150°C

Pin Count

4

Length

2mm

Series

BFP640

Height

0.9mm

Standards/Approvals

Pb-Free (RoHS)

Automotive Standard

AEC-Q101

The Infineon high gain low noise RF transistor provides outstanding performance for a wide range of wireless applications & Ideal for CDMA and WLAN applications.

Gold metallization for extra high reliability

70 GHz fT-Silicon Germanium technology

Pb-free (RoHS compliant) package

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