Infineon BFP740FH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343
- RS stock no.:
- 259-1450
- Mfr. Part No.:
- BFP740FH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 113,80
(exc. VAT)
R 130,875
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 875 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 4.552 | R 113.80 |
| 50 - 75 | R 4.438 | R 110.95 |
| 100 - 225 | R 4.305 | R 107.63 |
| 250 - 975 | R 4.133 | R 103.33 |
| 1000 + | R 3.968 | R 99.20 |
*price indicative
- RS stock no.:
- 259-1450
- Mfr. Part No.:
- BFP740FH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 44GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.55mm | |
| Length | 1.4mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 44GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.55mm | ||
Length 1.4mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.
Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA
High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA
OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA
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